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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time. CONDITIONS VBE = 0 TYP. 9 8 0.20 0.12 MAX. 1500 800 16 40 125 3.0 0.26 UNIT V V A A W V A A s s Tmb 25 C IC = 10 A; IB = 2.22A f = 32 kHz f = 90 kHz ICsat = 9.0 A; f = 32 kHz ICsat = 8.0 A; f = 90 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 125 150 150 UNIT V V A A A A W C C Tmb 25 C February 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 35 MAX. 1.0 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 1 CONDITIONS MIN. 7.5 800 0.83 4.8 TYP. 12.8 0.92 12 6.6 MAX. 1.0 2.0 3.0 1.01 8.5 UNIT mA mA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Base-emitter breakdown voltage IB = 1 mA Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA; L = 25 mH Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A Base-emitter saturation voltage IC = 10 A; IB = 2.22 A DC current gain IC = 1 A; VCE = 5 V IC = 10 A; VCE = 5 V DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (32 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time Switching times (90 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time CONDITIONS ICsat = 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A) 3.0 0.20 ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.0 A) 2 0.12 s s 4.0 0.26 s s TYP. MAX. UNIT ts tf ts tf IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). February 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW TRANSISTOR IC DIODE ICsat 100 hFE VCE = 1V t - - -Tj = 85 C Tj = 25 C IB IBend t 10us 13us 32us 10 VCE 1 0.01 t 0.1 1 10 IC / A 100 Fig.3. Switching times waveforms. Fig.6. High and low DC current gain. ICsat 90 % IC 100 hFE VCE = 5V - - -Tj = 85 C Tj = 25 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 10 IC / A 100 Fig.4. Switching times definitions. Fig.7. High and low DC current gain. + 150 v nominal adjust for ICsat 1 VBEsat /V - - -Ths = 85 C Ths = 25 C 0.9 IC = 10 A Lc IC = 8 A 0.8 IBend LB T.U.T. Cfb 0.7 -VBB 0.6 0 1 2 3 IB / A 4 Fig.5. Switching times test circuit. Fig.8. Typical base-emitter saturation voltage. February 1999 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW 10 VCEsat / V 10 - - -Tj = 85 C Tj = 25 C Zth / (K/W) BU4530AL 1 1 0.5 0.1 IC / IB = 5 0.2 0.1 0.05 0.02 P D tp t D= p T T 1E-05 1E-03 t/s 1E-01 t 1E+01 0.1 0.01 0.01 0.1 1 10 IC / A 100 0.001 1E-07 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB ts/tf / us Fig.12. Transient thermal impedance. 10 10 Ic(sat) (A) 8 8 6 6 4 4 2 2 0 0 0 0.5 1 1.5 2 2.5 IB / A 3 0 20 40 60 frequency (kHz) 80 100 Fig.10. Typical collector storage and fall time. IC =9 A; Tj = 85C; f = 32kHz Normalised Power Derating with heatsink compound Fig.13. ICsat during normal running vs. frequency of operation for optimum performance 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% 0 20 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C February 1999 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.14. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AW DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 6 Rev 1.000 |
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